Title :
The comprehensive study of liquid phase oxidation on GaAs-based transistor applications
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Abstract :
The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; GaAs; HBT; Schottky-gate HEMT; breakdown voltages; dc current gain; liquid phase oxidation; lower gate leakage currents; surface passivation; Etching; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Leakage current; MODFETs; Oxidation; Passivation; Surface treatment;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734739
