Porous Si dielectric parameter extraction for use in RF passive device integration: Measurements and simulations

The aim of this paper is to develop a formalism for porous Si dielectric parameter extraction for use in RF passive device design. We show that the extracted dielectric parameters using this formalism can be reliably used to simulate the experimental behavior of coplanar waveguides and inductors. In this respect we have fabricated RF devices on porous Si, extracted the dielectric parameters of the porous Si layer and used these parameters to simulate different RF devices, which are fabricated on the same type of material and tested experimentally. By comparing the simulations with the measurements a very good agreement is achieved.