Title :
High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser
Author :
Hahimoto, K. ; Kannari, F.
Author_Institution :
Keio Univ., Yokohama
Abstract :
Summary form only given. In this study, Pr3+-doped LiYF4 laser, was pumped by a high-power 444 nm GaN laser. The laser output power as a function of absorbed power for various output couplings was studied. No performance degradation was observed even at elevated crystal temperatures up to 380 K.
Keywords :
lithium compounds; optical couplers; optical pumping; praseodymium; solid lasers; LiYF4:Pr; absorbed power; crystal temperatures; diode-pumped continuous wave laser; laser output power; output couplings; temperature 380 K; Diodes; Gallium nitride; Laser excitation; Laser modes; Laser transitions; Lenses; Optical pumping; Optical resonators; Power lasers; Pump lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385890
