Title :
Low loss corner mirrors in InP/InGaAsP/InP for integrated optics etched with chlorinated gases
Author :
Schneider, J. ; Moser, M. ; Affolter, K.
Author_Institution :
Dept. of Res. & Dev., Swiss Telecom PTT, Bern, Switzerland
Abstract :
Integrated corner mirrors with 90° deflection angle have been produced in InP/InGaAsP/InP by etching with SiCl4/Cl2 at temperatures between 220°C and 280°C in a magnetron ion etching system. In contrast to CH4/H2-etch-processes applied to InP/InGaAsP, our process results in etched sidewalls with a morphology which is independent of the semiconductor material composition. Very smooth surfaces and losses as low as 0.45 dB per mirror at 1.3 μm wavelength and 0.4 dB at 1.53 μm wavelength were achieved. Two different types of positive resist and a tri-layer resist scheme were used as etch masks. A UV-hardening procedure was applied to make the resists resistant to the elevated etch temperature
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; masks; mirrors; optical losses; optical workshop techniques; photoresists; sputter etching; 0.4 dB; 0.45 dB; 1.3 micron; 1.53 micron; 220 to 280 C; Cl2; InP-InGaAsP-InP; SiCl4; UV-hardening; chlorinated gases; corner mirrors; etch masks; integrated optics; losses; magnetron ion etching; positive resist; semiconductor material; sidewall morphology; smooth surfaces; tri-layer resist; Etching; Indium phosphide; Integrated optics; Magnetic semiconductors; Mirrors; Morphology; Optical losses; Resists; Semiconductor materials; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328201
