Title :
Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals
Author :
Kawarabayashi, S. ; Yokogawa, M. ; Kawasaki, Akari ; Nakai, R.
Author_Institution :
Semicond. Div., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
Abstract :
Comparisons are made between conventional liquid encapsulated Czochralski (LEC), vapor pressure-controlled Czochralski (VCZ) and vertical gradient freeze (VGF) for the growth of InP crystals focusing on size and dislocation density. VCZ seems to be the most promising method for low dislocation density InP crystal growth with a diameter of larger than three inches
Keywords :
III-V semiconductors; crystal growth from melt; dislocation density; indium compounds; semiconductor growth; twinning; InP; InP crystal growth; LEC method; VCZ method; VGF method; crystal size; dislocation density; liquid encapsulated Czochralski method; vapor pressure-controlled Czochralski method; vertical gradient freeze method; Costs; Crystalline materials; Crystals; Fluctuations; Gallium arsenide; Indium phosphide; Magnetic fields; Size control; Stacking; Temperature control;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328208
