DocumentCode :
2148471
Title :
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs
Author :
SangHyeon Kim ; Yokoyama, Masafumi ; Ikku, Yuki ; Nakane, Ryosho ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
16-20 Sept. 2013
Firstpage :
139
Lastpage :
142
Abstract :
In this paper, we have fabricated uniaxially tensile strained In0.33Ga0.47As-OI MOSFETs, for the first time, using a lateral strain relaxation technique. A stripe-like line structure was fabricated from biaxially-strained In0.53Ga0.47As-OI. This structure exhibits the lateral strain relaxation. We have found that μeff in strained In0.53Ga0.47As-OI MOSFETs decreases with a decrease in the gate width (WG) as the mesa width. This mobility behavior can be understood by conduction band minimum (CBM) change due to the lateral strain relaxation.
Keywords :
III-V semiconductors; MOSFET; conduction bands; electron mobility; gallium arsenide; indium compounds; stress relaxation; CBM; In0.33Ga0.47As; conduction band minimum; electron mobility; gate width; lateral strain relaxation; mesa width; mobility behavior; stripe-like line structure; uniaxially strained InGaAs-OI MOSFET; uniaxially tensile strained OI MOSFET; Indium gallium arsenide; Indium phosphide; MOSFET; Silicon; Tensile strain; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
Type :
conf
DOI :
10.1109/ESSDERC.2013.6818838
Filename :
6818838
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2148471
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