DocumentCode
2148524
Title
A triangular-shaped GaAs/AlGaAs laser
Author
Behfar-Rad, A. ; Wong, S.S.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
319
Lastpage
322
Abstract
Monolithic GaAs/AlGaAs-based triangular ring lasers have been fabricated using chemically assisted ion beam etching. A triangular ring laser makes use of total internal reflection at two of its facets, with partial transmission at the third facet. The reflectivity of the third facet can vary from about 30% all the way up to 100%. Therefore, reduction of threshold current for these lasers is possible without the need for facet-coating. The fabrication of the lasers is described, and their performance is reported.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ring lasers; semiconductor junction lasers; sputter etching; GaAs-AlGaAs monolithic triangular ring lasers; chemically assisted ion beam etching; fabrication; partial transmission; reflectivity; threshold current reduction; total internal reflection; Chemical lasers; Chemical vapor deposition; Etching; Gallium arsenide; Monolithic integrated circuits; Optical buffering; Optical reflection; Reflectivity; Ring lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32821
Filename
32821
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