A new process for self-aligned silicon-on-insulator with block oxide and its memory application for 1T-DRAM

This paper proposes a new self-aligned process to form the silicon-on-insulator with block oxide. Based on the TCAD simulation, we have proved that the new process can get excellent short-channel effects immunity compared to the previous process [1]. Also, the new process can overcome the problem of the previous one, which can not be used on the thin BOX devices, so that the application of the block oxide can be applied extensively. In addition, we study how the height of the block oxide affects the devices performance in detail. Finally, we demonstrate a novel floating body cell using block oxide for 1T-DRAM application and its memory characteristics, large programming window and low leakage, are better than the conventional counterpart.