DocumentCode :
2148592
Title :
Millimeter-Wave Flip-Chip Front-End IC and Power Amplifier Using MBB Technology
Author :
Maeda, Masahiro ; Sakai, Hiroyuki
Author_Institution :
Electronics Research Laboratory, Matsushita Electronics Corporation, E-mail: maeda@oerl.src.mei.co.jp
Volume :
2
fYear :
1999
fDate :
Oct. 1999
Firstpage :
305
Lastpage :
308
Abstract :
This paper describes concepts and performance of millimeter-wave flip-chip IC and power amplifier using MBB (Micro Bump Bonding) technology. Two types of flip-chip technologies, MFIC (Millimeter-wave Flip-chip IC) and MBS (Micro Bump on Source electrode) technologies are introduced, and their applications to a K-band receiver front-end IC and a K-band power amplifier are presented.
Keywords :
Bonding; Costs; Dielectric losses; Electrodes; Insertion loss; MMICs; Millimeter wave technology; Power amplifiers; Resins; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
Type :
conf
DOI :
10.1109/EUMA.1999.338361
Filename :
4139501
Link To Document :
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