High bandwidth InAlAs/InGaAs PIN-HBT monolithically integrated photoreceiver

Author

Gutierrez-Aitken, A.L. ; Cowles, J. ; Bhattacharya, P. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

247

Lastpage

250

Abstract

A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 μm×5 μm emitter area transistors have self-aligned base metal and nonalloyed Ti/Pt/Au contacts. Discrete transistors demonstrated f_T and f_max of 54 GHz and 51 GHz, respectively. The amplifier demonstrated an effective transimpedance bandwidth of 10 GHz and a gain of 40 dBΩ. The integrated photoreceiver with a 10 μm×10 μm p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; wideband amplifiers; 10 GHz; 51 GHz; 54 GHz; 7.1 GHz; OEIC; PIN-HBT monolithically integrated photoreceiver; Ti-Pt-Au-InGaAs-InAlAs; base-collector junction; broadband type; high bandwidth; nonalloyed Ti/Pt/Au contacts; p-i-n photodiode; self-aligned base metal; transimpedance amplifier; wideband operation; Absorption; Bandwidth; Diodes; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Photodiodes; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328213

Filename

328213