High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy

Author

Streubel, K. ; Wallin, J. ; Landgren, G. ; Zhu, L. ; Olander, U. ; Lourdudoss, S. ; Kjebon, O.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

fYear

1994

fDate

27-31 Mar 1994

Firstpage

259

Lastpage

262

Abstract

In this paper, we shall report on a systematic study on the impact of MOVPE growth conditions on the quality of strained GaInAsP/GaInAsP multi quantum well samples. Several growth parameters as well as the composition of the barrier material were varied independently. The optimized growth conditions were then applied to fabricate laser structures, incorporating similar MQW stacks as active region. The excellent performance of those devices will underline the high quality of the strained material and emphasize the importance of properly chosen growth parameters

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; GaInAsP-GaInAsP; MOVPE growth; MQW stacks; barrier material; composition; strained GaInAsP/GaInAsP quantum well laser; Capacitive sensors; Crystalline materials; Epitaxial growth; Inductors; Lattices; Optical materials; Photoluminescence; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328216

Filename

328216