Title :
Two-dimensional, static and dynamic device simulation of laser diodes
Author :
Seki, S. ; Tomizawa, M. ; Yokoyama, K. ; Yoshii, A.
Author_Institution :
Opto-electron. Lab., NTT, Kanagawa, Japan
Abstract :
A two-dimensional device simulator for laser diodes is introduced, and its capability for quantitative device design of InGaAsP lasers is shown. This static and dynamic device simulator is based on the self-consistent analysis of five basic equations (Poisson´s equation, current continuity equations for electrons and holes, the wave equation, and the rate equation for photons). The simulator has been applied to the optimum design of simplified buried-heterostructure (BH) lasers. The simulator has made it possible to optimize device structure with respect to several requirements, such as low threshold current, low leakage current, fundamental transverse lasing mode, and high-frequency modulation capability.<>
Keywords :
III-V semiconductors; electronic engineering computing; gallium arsenide; gallium compounds; indium compounds; laser modes; optical modulation; semiconductor junction lasers; InGaAsP lasers; Poisson´s equation; buried heterostructure lasers; current continuity equations; dynamic device simulation; fundamental transverse lasing mode; high-frequency modulation; laser diodes; leakage current; photon rate equation; quantitative device design; self-consistent analysis; static device simulation; threshold current; two-dimensional device simulator; wave equation; Design automation; Difference equations; Diode lasers; Eigenvalues and eigenfunctions; Laboratories; Laser modes; Optical design; Poisson equations; Radiative recombination; Threshold current;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32822
