DocumentCode :
2148831
Title :
Case study for particle agglomeration during chemical mechanical polishing process
Author :
Lan, Yongqing ; Li, Yuzhuo
Author_Institution :
Clarkson Univ., Potsdam, NY, USA
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1215
Lastpage :
1218
Abstract :
Over sized particles in spent slurry are analyzed to examine particle agglomeration during chemical mechanical polishing process. In tungsten (W) polishing, due to greater chance of collision for large particles, high abrasive content slurries yield less oversized particles during polishing. However, in oxide wafer polishing, fumed silica follows the similar agglomerating behavior as in tungsten polishing, while colloidal silica shows a reversed trend. Defectivity measurements on oxide wafer confirm the correlation between spent slurry large particle count (LPC) and defects number on wafers, which means agglomerates produced during polishing process may cause defects in CMP.
Keywords :
chemical mechanical polishing; silicon compounds; slurries; tungsten; SiO2; W; chemical mechanical polishing process; defectivity measurement; over sized particles; oxide wafer polishing; particle agglomeration; spent slurry large particle count; tungsten polishing; Abrasives; Chemical analysis; Chemical processes; Energy barrier; Linear predictive coding; Particle measurements; Planarization; Silicon compounds; Slurries; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734766
Filename :
4734766
Link To Document :
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