InAlAs/InGaAs MSM PDs heteroepitaxially grown on Si

Author

Sasaki, T. ; Enoki, T. ; Tachikawa, M. ; Sugo, M. ; Mori, H.

Author_Institution

NTT Opto-Electron. Labs., Atsugi, Japan

fYear

1994

fDate

27-31 Mar 1994

Firstpage

288

Lastpage

291

Abstract

To study the performance and reproducibility of photodiodes (PDs) on Si in the long-wavelength region, InAlAs/InGaAs metal-semiconductor-metal (MSM) PDs were fabricated on high-quality heteroepitaxial InP layers on Si substrates. The PDs showed dark currents of 0.5-2×10^-8 A and responsivity of 0.05-0.15 A/W at the bias voltage of 5 V. These DC characteristics are similar to those of devices on InP substrates, The PDs on Si had pulse responses with rise times of 30-70 ps, fall times of 300-500 ps and full widths at half maximum of 150-400 ps

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; semiconductor epitaxial layers; 0.5*10^-8 A; 5 V; DC characteristics; InAlAs-InGaAs; InAlAs/InGaAs metal-semiconductor-metal photodiodes; InP; Si; Si substrates; bias voltage; dark currents; fall times; full widths at half maximum; high-quality heteroepitaxial InP layers; long-wavelength region; performance; pulse responses; reproducibility; responsivity; rise times; Dark current; Epitaxial layers; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Laser sintering; Reproducibility of results; Substrates; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328223

Filename

328223