Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Author

Aoulaiche, Marc ; Simoen, Eddy ; Ritzenthaler, R. ; Schram, T. ; Arimura, H. ; Cho, Moonju ; Kauerauf, T. ; Groeseneken, Guido ; Horiguchi, Naoto ; Thean, A. ; Federico, Alessandro ; Crupi, Felice ; Spessot, A. ; Caillat, Christian ; Fazan, P. ; Na, H.-J.

Author_Institution

Imec, Leuven, Belgium

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

190

Lastpage

193

Abstract

The impact of the Al₂O₃ position with respect to HfO₂ in the process flow, is investigated. It is shown that Al₂O₃ incorporation in order to increase the pMOS threshold voltage, slightly degrades the mobility, slightly increases NBTI and increases the EOT with respect to the reference without Al₂O₃ Moreover, the trap density profiles depend on the Al₂O₃ position: higher in the interfacial layer when Al₂O₃ is below and higher in the HfO₂ when Al₂O₃ is above HfO₂. Furthermore, Al₂O₃ below HfO₂ shows higher gate leakage, reduced LF noise but marginal NBTI difference compared to AL₂O₃ above HfO₂.

Keywords

DRAM chips; MOSFET; aluminium compounds; hafnium compounds; leakage currents; negative bias temperature instability; semiconductor device noise; semiconductor device reliability; transistors; Al₂O₃; EOT; HfO₂; LF noise; NBTI; equivalent oxide thickness; gate leakage; high-k metal gated DRAM periphery transistors; interfacial layer; low frequency noise; negative bias temperature instability; pMOS threshold voltage; process flow; trap density profiles; Aluminum oxide; Hafnium compounds; High K dielectric materials; Logic gates; Low-frequency noise; Reliability; Silicon; Al; Al2O3; DRAM peripheral transistors; NBTI charge pumping; Work Function Engineering; low frequency noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818851

Filename

6818851