Title :
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations
Author :
Coquand, R. ; Barraud, S. ; Casse, M. ; Koyama, Masanori ; Maffini-Alvaro, V. ; Samson, M.-P. ; Tosti, L. ; Mescot, X. ; Ghibaudo, Gerard ; Monfray, Stephane ; Boeuf, F. ; Faynot, O. ; De Salvo, B.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This paper describes low-field electron transport in nanowire FETs with high-k/metal gate fabricated on 300 mm SOI and strained-SOI substrates. We studied the temperature and size dependences of gate-channel capacitance (CGc) and effective mobility (μEFF) down to 8 nm width. We show that the electron mobility is strongly reduced for sub-10 nm widths. Low-temperature measurements show a quantum oscillatory behavior of mobility revealing the electron confinement in 1D subbands structure of nanowires for temperature below 50K.
Keywords :
electron mobility; field effect transistors; high-k dielectric thin films; nanowires; silicon-on-insulator; 1D subbands structure; SOI nanowires; Si; effective mobility; electron confinement; electron mobility; gate-channel capacitance; high-k-metal gate; low-field electron transport; low-temperature measurements; low-temperature transport characteristics; mobility oscillations; nanowire FET; quantum oscillatory behavior; sSOI nanowires; size 300 nm; strained-SOI substrates; Electron mobility; Logic gates; Nanowires; Oscillators; Quantum capacitance; Temperature measurement; SOI nanowire; electron mobility; low temperature; quantum confinement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818853
