Title :
Reliability of InGaAs/InP semiconductor diode lasers
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The reliability of InGaAs/InP semiconductor lasers at typical use conditions is extremely high. This has led to their successful deployment in applications ranging from terrestrial long-haul communication links (MTTF⩾25 years) to transoceanic submarine cable systems (MTTF⩾300 years). At the same time, extremely long service lifetimes and high system reliability requirements make the quantification of device reliability an inexact science, since the period for study must of necessity be a small fraction of the desired system life
Keywords :
gallium arsenide; gallium compounds; indium compounds; optical communication equipment; reliability; semiconductor lasers; 25 year; 300 y; InGaAs/InP semiconductor diode lasers; InGaAsP-InP; desired system life; device reliability; extremely long service lifetimes; high system reliability requirements; mean time to failure; terrestrial long-haul communication links; transoceanic submarine cable systems; Acceleration; Aging; Degradation; Extrapolation; Indium gallium arsenide; Indium phosphide; Semiconductor device reliability; Semiconductor diodes; Semiconductor lasers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328225
