Cu contact on NiSi/Si with a Ru/TaN barrier stack

Author

Zhao, Ying ; Zhou, Mi ; Li, Ji ; Ru, Guo-Ping ; Jiang, Yu-Long ; Li, Bing-Zong ; Qu, Xin-Ping

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1227

Lastpage

1230

Abstract

The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally and electrically stable up to 500Â°C annealing for 30 minutes and it will have potential application as a diffusion barrier for Cu contact on NiSi.

Keywords

Schottky barriers; X-ray diffraction; annealing; copper; diffusion barriers; electrical contacts; nickel alloys; ruthenium; scanning electron microscopy; silicon; tantalum compounds; thermal stability; Cu; NiSi-Si; Ru-TaN; Schottky barrier height; X-ray diffraction; annealing; barrier stack; contact; diffusion barrier; electrical stability; four point probe; scanning electron microscopy; temperature 500 degC; thermal stability; time 30 min; Annealing; Conductivity; Contacts; Copper; Plugs; Probes; Scanning electron microscopy; Sputtering; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734769

Filename

4734769