• DocumentCode
    2148967
  • Title

    Challenges and solutions of post etch post ash residue removal

  • Author

    Peng, Libbert ; Liu, Bing ; Gong, Yong ; Wang, Shumin

  • Author_Institution
    Anji Microelectron. (Shanghai) Co., Ltd., Pudong, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1238
  • Lastpage
    1241
  • Abstract
    Wet cleaning technology plays a critical role in IC industry, and takes up around 30% of whole process. With the critical dimension continuous shrinking, there are many additional requirements exposed. Among BEOL (back end of line) post etch post ash residue removal technology, galvanic corrosion elimination, low geometry via cleaning, pad crystal defect reduction and environment friendly are the major requirements. But the conventional cleaning technologies are challenging to meet them. In this paper, we will share our studies of key aspects in post etch post ash residue removal system, such as: surface energy reduction, substrate materials protection and being environmental conscientious. By those studies, the challenges are addressed, and improved performance for both organic and inorganic residues removal is achieved. Further more, environmental distress caused by chemistry is reduced.
  • Keywords
    ash; corrosion; corrosion protection; crystal defects; environmental factors; etching; galvanising; integrated circuit manufacture; integrated circuit reliability; semiconductor industry; surface cleaning; surface energy; BEOL; IC industry; back end of line; critical dimension continuous shrinking; environment friendly process; environmental distress; galvanic corrosion elimination; inorganic residue removal; organic residue removal; pad crystal defect reduction; post etch post ash residue removal technology; substrate material protection; surface energy reduction; wet cleaning technology; Ash; Chemical technology; Corrosion; Dielectric materials; Dielectric substrates; Etching; Galvanizing; Geometry; Green cleaning; Surface tension;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734772
  • Filename
    4734772