DocumentCode
2148967
Title
Challenges and solutions of post etch post ash residue removal
Author
Peng, Libbert ; Liu, Bing ; Gong, Yong ; Wang, Shumin
Author_Institution
Anji Microelectron. (Shanghai) Co., Ltd., Pudong, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1238
Lastpage
1241
Abstract
Wet cleaning technology plays a critical role in IC industry, and takes up around 30% of whole process. With the critical dimension continuous shrinking, there are many additional requirements exposed. Among BEOL (back end of line) post etch post ash residue removal technology, galvanic corrosion elimination, low geometry via cleaning, pad crystal defect reduction and environment friendly are the major requirements. But the conventional cleaning technologies are challenging to meet them. In this paper, we will share our studies of key aspects in post etch post ash residue removal system, such as: surface energy reduction, substrate materials protection and being environmental conscientious. By those studies, the challenges are addressed, and improved performance for both organic and inorganic residues removal is achieved. Further more, environmental distress caused by chemistry is reduced.
Keywords
ash; corrosion; corrosion protection; crystal defects; environmental factors; etching; galvanising; integrated circuit manufacture; integrated circuit reliability; semiconductor industry; surface cleaning; surface energy; BEOL; IC industry; back end of line; critical dimension continuous shrinking; environment friendly process; environmental distress; galvanic corrosion elimination; inorganic residue removal; organic residue removal; pad crystal defect reduction; post etch post ash residue removal technology; substrate material protection; surface energy reduction; wet cleaning technology; Ash; Chemical technology; Corrosion; Dielectric materials; Dielectric substrates; Etching; Galvanizing; Geometry; Green cleaning; Surface tension;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734772
Filename
4734772
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