Title :
High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers
Author :
Golshani, Negin ; Mohammadi, Vahid ; Ramesh, S. ; Nanver, Lis K.
Author_Institution :
Dept. Microelectron., Delft Univ. of Technol., Delft, Netherlands
Abstract :
Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.
Keywords :
boron; chemical vapour deposition; elemental semiconductors; monolithic integrated circuits; silicon; B; Si; high-ohmic resistors; integrated resistors; n-type silicon; nanometer-thin pure-boron chemical-vapour-deposited layers; p-type conductive layer; pure boron depositions; sheet resistance; Electrical resistance measurement; Junctions; Photodiodes; Resistance; Resistors; Silicon; Temperature measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818856
