One-step MOVPE-grown AlGaInP visible laser with round-beam-spot, small-astigmatism, and high-power characteristics

Author

Tanahashi, Toshiyuki ; Furuya, Akira ; Anayama, Chikashi ; Kondo, Makoto

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1994

fDate

27-31 Mar 1994

Firstpage

307

Lastpage

310

Abstract

We developed a real-index guided AlGaInP visible laser, a selfaligned stepped substrate (S³) laser, grown by one-step metalorganic vapor phase epitaxy (MOVPE) using simultaneous doping or alternate doping with Zn and Se on a stepped substrate. These doping techniques are based on the dependence of the dopant incorporation on the substrate orientation. As the substrate orientation changes from (100) to (311)A, the effective distribution coefficient of Zn increases and that of Se decreases. The S³ laser has a beam astigmatism of less than 1 μm and small aspect ratio of 1.5, and stable high-power operation of 35 mW at 50°C

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 35 mW; 50 C; AlGaInP; AlGaInP visible laser; Se; Zn; alternate doping; beam astigmatism; dopant incorporation; effective distribution coefficient; high-power characteristics; one-step MOVPE-grown; one-step metalorganic vapor phase epitaxy; real-index guided; round-beam-spot; selfaligned stepped substrate (S³) laser; simultaneous doping; small aspect ratio; small-astigmatism; stable high-power operation; substrate orientation; Doping; Epitaxial growth; Epitaxial layers; Impurities; Laser beams; Laser stability; Substrates; Vision defects; Waveguide lasers; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328231

Filename

328231