Title :
Transmission experiments using 1.3 μm single mode InGaAs VCSELs
Author :
Soderberg, E. ; Gustavsson, J.S. ; Modh, P. ; Larsson, A. ; Zhang, Z.Z. ; Berggren, J. ; Hammar, M.
Author_Institution :
Chalmers Univ. of Technol., Goteborg
Abstract :
In this paper, transmission experiments at OC-48 and 10 GbE bit rates (2.488 and 10.31 Gbps, respectively) up to 85°C using 1.3 μm single mode InGaAs VCSELs (vertical cavity surface emitting lasers) are reported.
Keywords :
III-V semiconductors; chirp modulation; error statistics; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; surface emitting lasers; InGaAs; bit-error rates; cavity resonance; chirp induced pulse compression; optical access networks; optical power; single mode VCSELs; temperature 85 °C; transmission experiments; vertical cavity surface emitting lasers; wavelength 1.3 μm; Bit error rate; Bit rate; High speed optical techniques; Indium gallium arsenide; Optical pulse compression; Optical surface waves; Power generation; Surface resistance; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0930-3
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385918
