Title :
Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness
Author :
Herrnsdorf, Johannes ; McKendry, Jonathan J. D. ; Shuailong Zhang ; Enyuan Xie ; Ferreira, Ricardo ; Massoubre, David ; Zuhdi, Ahmad Mahmood ; Henderson, Robert K. ; Underwood, Ian ; Watson, Scott ; Kelly, Anthony E. ; Gu, Erdan ; Dawson, Martin D.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Abstract :
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.
Keywords :
III-V semiconductors; LED displays; brightness; colour displays; gallium compounds; microdisplays; wide band gap semiconductors; GaN; active-matrix microlight-emitting diode display; blue microdisplay; differential resistance; luminance; n-contact; unprecedented brightness; Brightness; CMOS integrated circuits; Gallium nitride; Heating; Layout; Light emitting diodes; Optical switches; CMOS integrated circuits; displays; flip-chip devices; integrated optoelectronics; light-emitting diodes (LEDs); light-emitting diodes (LEDs).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2416915
