Title :
Dose Rate Effects on Bipolar Components
Author :
Toscano, F. ; Ouellet, A. ; Tilhac, F. ; Lagarrigue, T.
Author_Institution :
STMicroelectron. Co., Burlington, MA, USA
Abstract :
The TID Co60 Dose rate effects have been examined in bipolar transistors at high and low dose rates. The aim of the radiation tests is to study the ELDRs on NPN and SPNP elementary transistors.
Keywords :
bipolar transistors; ELDR; NPN elementary transistors; SPNP elementary transistors; TID Co60 dose rate effects; bipolar components; bipolar transistors; enhanced low dose rate sensitivity; high dose rates; radiation tests; total ionizing dose; Annealing; Companies; Integrated circuits; Radiation effects; Radiation hardening (electronics); Silicon; Tin;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658195
