Novel back-biased UTBB lateral SCR for FDSOI ESD protections

Author

Solaro, Y. ; Fonteneau, P. ; Legrand, Charles-Alexandre ; Fenouillet-Beranger, C. ; Ferrari, P. ; Cristoloveanu, S.

Author_Institution

STMicroelectron., Crolles, France

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

222

Lastpage

225

Abstract

For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated with 28 nm Fully Depleted SOI technology. A new control technique is proposed: the use of back-gate biasing. Characteristics such as low leakage, controllable triggering (as a function of back gate voltage and ground-plane type), and device geometry are explored. We discuss several configurations (floating or locked P-base) and show promising results in terms of ESD protection performance.

Keywords

electrostatic discharge; integrated circuit design; silicon-on-insulator; thyristors; ESD protection; FDSOI; UTBB; back gate voltage; back-gate biasing; controllable triggering; device geometry; electrostatic discharge protection; fully depleted SOI technology; ground-plane type; lateral SCR; silicon controlled rectifier; size 28 nm; ultrathin body and buried oxide; Electrostatic discharges; Integrated circuits; Leakage currents; Logic gates; MOSFET; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818859

Filename

6818859