Title :
Gate-first high-k/metal gate stack for advanced CMOS technology
Author :
Nara, Y. ; Mise, N. ; Kadoshima, M. ; Morooka, T. ; Kamiyama, S. ; Matsuki, T. ; Sato, M. ; Ono, T. ; Aoyama, T. ; Eimori, T. ; Ohji, Y.
Author_Institution :
Semicond. Leading Edge Technol. (Selete), Tsukuba, Japan
Abstract :
Practical and manufacturable solutions for metal gate/dual high-k CMOS integration are presented. In order to overcome the difficulties of threshold voltage control of metal gate/high-k gate stack especially for gate-first integration, several material designs have been proposed so far. These include different metal gate materials and different high-k materials which are separately used in nMOS and pMOS transistors. These approaches sometimes bring about complicated CMOS integration scheme. In this paper, therefore, we will give simple metal gate/dual high-k CMOS fabrication processes with low threshold voltages which are suitable for scaled CMOS device manufacturing.
Keywords :
CMOS integrated circuits; MOSFET; aluminium compounds; dielectric materials; hafnium compounds; high-k dielectric thin films; silicon compounds; tantalum compounds; titanium compounds; CMOS fabrication process; HfAlSiON-TiAlN; HfSiON-TaSiN; gate-first high-k-metal gate stack; high-k dielectric; metal gate-dual high-k CMOS integration; nMOS transistor; pMOS transistor; threshold voltage; CMOS process; CMOS technology; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOS devices; MOSFETs; Manufacturing; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734777
