Title :
In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices
Author :
Herrmann, Markus ; Grurmann, Kai ; Gliem, F. ; Schmidt, Heidemarie ; Ferlet-Cavrois, Veronique
Abstract :
4-Gbit DDR3 SDRAM devices have been tested for total-dose effects up to 400 krad. Some devices show a very peculiar error pattern, depending on the time a page is kept active.
Keywords :
DRAM chips; SRAM chips; integrated circuit testing; radiation effects; DDR3 SDRAM devices; error pattern; in-situ TID test; storage capacity 4 Gbit; total-dose effects; Current measurement; Performance evaluation; Radiation effects; SDRAM; Temperature measurement; Vectors; Writing;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658199
