DocumentCode
2149150
Title
Flicker noise in advanced CMOS technology: Effects of halo implant
Author
Paydavosi, Navid ; Venugopalan, Sarad ; Sachid, Angada ; Niknejad, A. ; Chenming Hu ; Dey, Shuvashis ; Martin, Sebastien ; Xin Zhang
Author_Institution
Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear
2013
fDate
16-20 Sept. 2013
Firstpage
238
Lastpage
241
Abstract
A new model and a theory to capture the effects of halo (pocket) implants on the flicker noise of the advanced-node MOSFETs have been proposed and verified with measurements. The model can accurately capture the bias dependence of the drain-current flicker-noise (FN) power density. Also for the first time, we explain and model the unexpected channel-length dependence of FN power density in strong-halo devices.
Keywords
CMOS integrated circuits; MOSFET; flicker noise; semiconductor device noise; advanced CMOS technology; advanced-node MOSFETs; bias dependence; channel-length dependence; drain-current flicker-noise power density; halo implant; CMOS integrated circuits; Data models; Density measurement; MOSFET; Noise; Power system measurements; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location
Bucharest
Type
conf
DOI
10.1109/ESSDERC.2013.6818863
Filename
6818863
Link To Document