Title :
Modeling and analysis of GaAs/AlGaAs heterojunction bipolar transistors for improved current gain and fT
Author :
Hafizi, M.E. ; Kim, M.E. ; Oki, A.K. ; Camou, J.B. ; Umemoto, D.K. ; Tran, L.T. ; Pawlowicz, L.M. ; Crowell, C.R.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
Numerical calculations have been used to analyze the DC current gain β, I-V transfer characteristics, and unity current gain cutoff frequency fT of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). It is shown that a simple modification in the doping of the emitter-base (E-B) region modifies the band structure to reduce the E-B space-charge region recombination and widens the E-B depletion layer width, which result in significant improvement in β and fT
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; AlGaAs-GaAs; DC current gain; HBTs; I-V transfer characteristics; band structure modification; depletion layer width; emitter-base region doping profile; heterojunction bipolar transistors; modelling; recombination reduction; space-charge region recombination; unity current gain cutoff frequency; Current density; Current measurement; Cutoff frequency; Density measurement; Electrons; Frequency measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Thyristors;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69462
