A Study of hafnium dioxide (HfO2) dielectric charges

Author

Zoolfakar, A.S. ; Hashim, Hashimah ; Taylor, Steve

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. MARA, Malaysia

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1268

Lastpage

1271

Abstract

In this paper, hafnium dioxide, HfO₂, one of the promising high-k dielectric films is studied. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380Â°C were conducted on the MOS capacitors. It can be concluded that the dielectric charges for hafnium dioxide, HfO₂ manage to be reduced significantly by annealing treatment. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.

Keywords

annealing; hafnium compounds; high-k dielectric thin films; HfO₂; MOS capacitors; annealing; annealing treatment; capacitance-voltage measurements; dielectric charges; high-k dielectric films; interface trap charges; oxide charges; Annealing; CMOS technology; Capacitance; Hafnium oxide; High-K gate dielectrics; MOS capacitors; Silicon; Switches; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734782

Filename

4734782