Title :
Three dimensional topography simulation model using diffusion equation
Author :
Fujinaga, M. ; Kotani, N. ; Oda, H. ; Shirahata, M. ; Genjo, H. ; Katayama, T. ; Ogawa, T. ; Akasaka, Y.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
An etching model for three-dimensional topography simulation is proposed in which the topography is deduced by solving the diffusion equation. A 3-D topography simulator called 3-D MULSS (multilayer shape simulator) has been developed on the basis of this model. Using this program, contact hole and trench etching was simulated exactly, and the computation was extremely fast.<>
Keywords :
electronic engineering computing; etching; integrated circuit technology; 3D MULSS; contact hole etching; diffusion equation; etching model; multilayer shape simulator; three-dimensional topography simulation; trench etching; Computational modeling; Differential equations; Etching; Laboratories; Large scale integration; Ray tracing; Shape; Surface fitting; Surface topography; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32824
