Title :
Radiation Effects of High Voltage MESFETs at the 45nm Node
Author :
Wilk, Seth J. ; Lepkowski, William ; Bo Chen ; Kam, Jason ; Goryll, Michael ; Holbert, Keith ; Thornton, Trevor J.
Author_Institution :
SJT Micropower Inc., Fountain Hills, AZ, USA
Abstract :
A high voltage MESFET transistor has been fabricated using a commercial 45nm SOI foundry. The device has a breakdown voltage >25X the nominal CMOS and is shown to be radiation tolerant to 1Mrad.
Keywords :
CMOS integrated circuits; Schottky gate field effect transistors; radiation effects; silicon-on-insulator; SOI foundry; breakdown voltage; high voltage MESFET transistor; radiation effects; radiation tolerant; size 45 nm; CMOS integrated circuits; Logic gates; MESFETs; Power amplifiers; Radiation effects; Radio frequency; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658202
