• DocumentCode
    2149298
  • Title

    Recent Radiation Test Results for Power MOSFETs

  • Author

    Lauenstein, Jean-Marie ; Topper, Alyson D. ; Casey, Megan C. ; Wilcox, Edward P. ; Phan, Anthony M. ; Kim, Hak S. ; LaBel, Kenneth A.

  • Author_Institution
    NASA/GSFC, Greenbelt, MD, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.
  • Keywords
    power MOSFET; semiconductor device testing; SEE; TID test; metal-oxide-semiconductor field effect transistors; power MOSFET; radiation test; single-event effect; total ionizing dose; Current measurement; Leakage currents; Logic gates; MOSFET; NASA; Radiation effects; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658205
  • Filename
    6658205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149298