Title :
The effect of thermal treatment on the electrical properties of MBE-AlInAs
Author :
Luo, J.K. ; Thomas, H. ; Clark, S.A. ; Williams, R.H.
Author_Institution :
Sch. of Electr., Electron. & Syst. Eng., Univ. Coll. of Wales, Cardiff, UK
Abstract :
The effect of thermal treatment on the electrical properties of Al 0.48In0.52As/InP materials grown by molecular beam epitaxy (MBE) has been investigated using Schottky barrier structures. It was found that the intrinsic defects incorporated in MBE-AlInAs layers cause an excess tunnelling current at forward and reverse bias, and are responsible for the low barrier height of Schottky diodes. Thermal annealing at TA>500°C annihilates the major defects in the AlInAs layer, which results in a reduction of the excess tunnelling current and enhancement of the barrier height. These results therefore, demonstrate a method to overcome the shortcomings introduced by defects and to improve the electrical properties of MBE-AlInAs materials
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; annealing; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; tunnelling; 500 C; Al0.48In0.52As-InP; Schottky barrier height; Schottky diodes; defects; electrical properties; molecular beam epitaxy; thermal annealing; thermal treatment; tunnelling current; Annealing; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Schottky barriers; Schottky diodes; Substrates; Temperature; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328245
