Title :
Single Event Characterization of a Family of Voltage Supervisors Designed in a 0.35-µm Triple-Well CMOS Technology
Author :
Kerwin, David B. ; Lotfi, Younes ; Zanchi, A. ; Merkel, Ken ; Wilson, Aswathy ; Hafer, C.
Author_Institution :
Aeroflex Colorado Springs, Colorado Springs, CO, USA
Abstract :
We present Single Event Latch-Up (SEL), Single Event Transient (SET), and Total Ionizing Dose (TID) data for a family of voltage supervisors fabricated in a 0.35-μm triple-well, mixed-signal CMOS process.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; SEL; SET; TID data; mixed-signal CMOS process; single event characterization; single event latch-up; single event transient; size 0.35 mum; total ionizing dose data; triple-well CMOS technology; voltage supervisors; Monitoring; Radiation effects; Temperature measurement; Testing; Threshold voltage; Tin; Xenon;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658208
