Ion implantation technology and system for beyond 45nm node devices

Author

Tanjyo, Masayasu ; Nagayama, Tsutomu ; Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji ; Maehara, Noriaki ; Une, Hideyasu ; Nogami, Takashi ; Hino, Masayoshi ; Kobayashi, Tomoaki ; Fujita, Hideki ; Matsumoto, Takao ; Yoshimura, Yosuke ; Sakai, Shigeki ; Nag

Author_Institution

Nissin Ion Equip. Co. Ltd., Kyoto, Japan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1292

Lastpage

1295

Abstract

Beyond 45 nm node transistor device transition is reviewed and the compensation for MoorÂ¿s scaling law, next generation transistor structure and material will be changed. Accordingly, the ion implanter should be changed for the suitable production efficiency and new functions. The Medium Current ion implanter energy range was changed for the total low cost performance. The Low Energy ion implanter is appeared for miniaturization of the semiconductor devices. It will be developed for novel requirements of the devices.

Keywords

ion implantation; transistors; Moor´s scaling law; ion implantation technology; medium current ion implanter energy range; next generation transistor; node transistor device transition; size 45 nm; Cellular phones; Costs; Dielectric materials; Ion implantation; Marketing and sales; Production; Random access memory; Semiconductor devices; Semiconductor materials; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734791

Filename

4734791