DocumentCode
2149489
Title
Atomic oxygen effects on NiSi and Ni(Pt)Si: Novel oxidation mechanism
Author
Manandhar, Sudha ; COpp, Brian ; Kelber, Jeffry
Author_Institution
Dept. of Chem., Univ. of North Texas, Denton, TX, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1300
Lastpage
1303
Abstract
XPS data demonstrate that exposure of NiSi or Ni(Pt)Si to atomic oxygen at 300 K results in the kinetically controlled formation of transition metal silicate-containing overlayers > 45 ¿ thick regardless of the type of substrate doping. The results indicate that plasma exposure poses significant problems for NiSi/Ni(Pt)Si processing and oxide removal prior to subsequent metallization.
Keywords
X-ray photoelectron spectra; doping; metallisation; nickel alloys; oxidation; plasma materials processing; platinum alloys; silicon alloys; Ni(Pt)Si; XPS; atomic oxygen effects; kinetically controlled formation; metallization; oxidation mechanism; oxide removal; plasma exposure; substrate doping; temperature 300 K; transition metal silicate-containing overlayers; Atomic measurements; Doping; Metallization; Oxidation; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Semiconductor films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734793
Filename
4734793
Link To Document