• DocumentCode
    2149536
  • Title

    Atomic level solutions® for advanced microelectronic applications

  • Author

    Senzaki, Yoshi ; Seidel, T. ; McCormick, J. ; Kim, G.Y. ; Kim, H.Y. ; Karim, Z. ; Lu, B. ; Ramanathan ; Lindner, J. ; Silva, H. ; Daulesberg, M.

  • Author_Institution
    AIXTRON, Sunnyvale, CA, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1308
  • Lastpage
    1311
  • Abstract
    Atomic Layer Deposition (ALD) has successfully been applied to advanced microelectronic applications importantly for conformal coatings on high aspect ratio devices. However, traditional ALD is limited in deposition rate because the ability to bring precursors rapidly to the surface. In this paper we review recent results for precursor delivery using advanced vaporization (Trijet) as well as recent advances in Pulsed CVD (AVD®) using art elements held in common with ALD technology. These and other advances - such as Multiple Single Wafer configurations allow ALD application for continued scaling under conditions of improved process control and higher productivity. Key applications include: capacitors (dielectrics and electrodes), transistors and contacts. This paper reviews these technological advances in the context of their applications.
  • Keywords
    atomic layer deposition; chemical vapour deposition; coating techniques; integrated circuits; semiconductor process modelling; Atomic Layer Deposition; Trijet; advanced microelectronic applications; advanced vaporization; atomic level solutions; precursor delivery; pulsed CVD; Art; Atomic layer deposition; Capacitors; Coatings; Dielectrics; Electrodes; Microelectronics; Process control; Productivity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734795
  • Filename
    4734795