DocumentCode :
2149536
Title :
Atomic level solutions® for advanced microelectronic applications
Author :
Senzaki, Yoshi ; Seidel, T. ; McCormick, J. ; Kim, G.Y. ; Kim, H.Y. ; Karim, Z. ; Lu, B. ; Ramanathan ; Lindner, J. ; Silva, H. ; Daulesberg, M.
Author_Institution :
AIXTRON, Sunnyvale, CA, USA
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
1308
Lastpage :
1311
Abstract :
Atomic Layer Deposition (ALD) has successfully been applied to advanced microelectronic applications importantly for conformal coatings on high aspect ratio devices. However, traditional ALD is limited in deposition rate because the ability to bring precursors rapidly to the surface. In this paper we review recent results for precursor delivery using advanced vaporization (Trijet) as well as recent advances in Pulsed CVD (AVD®) using art elements held in common with ALD technology. These and other advances - such as Multiple Single Wafer configurations allow ALD application for continued scaling under conditions of improved process control and higher productivity. Key applications include: capacitors (dielectrics and electrodes), transistors and contacts. This paper reviews these technological advances in the context of their applications.
Keywords :
atomic layer deposition; chemical vapour deposition; coating techniques; integrated circuits; semiconductor process modelling; Atomic Layer Deposition; Trijet; advanced microelectronic applications; advanced vaporization; atomic level solutions; precursor delivery; pulsed CVD; Art; Atomic layer deposition; Capacitors; Coatings; Dielectrics; Electrodes; Microelectronics; Process control; Productivity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734795
Filename :
4734795
Link To Document :
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