DocumentCode
2149536
Title
Atomic level solutions® for advanced microelectronic applications
Author
Senzaki, Yoshi ; Seidel, T. ; McCormick, J. ; Kim, G.Y. ; Kim, H.Y. ; Karim, Z. ; Lu, B. ; Ramanathan ; Lindner, J. ; Silva, H. ; Daulesberg, M.
Author_Institution
AIXTRON, Sunnyvale, CA, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1308
Lastpage
1311
Abstract
Atomic Layer Deposition (ALD) has successfully been applied to advanced microelectronic applications importantly for conformal coatings on high aspect ratio devices. However, traditional ALD is limited in deposition rate because the ability to bring precursors rapidly to the surface. In this paper we review recent results for precursor delivery using advanced vaporization (Trijet) as well as recent advances in Pulsed CVD (AVD®) using art elements held in common with ALD technology. These and other advances - such as Multiple Single Wafer configurations allow ALD application for continued scaling under conditions of improved process control and higher productivity. Key applications include: capacitors (dielectrics and electrodes), transistors and contacts. This paper reviews these technological advances in the context of their applications.
Keywords
atomic layer deposition; chemical vapour deposition; coating techniques; integrated circuits; semiconductor process modelling; Atomic Layer Deposition; Trijet; advanced microelectronic applications; advanced vaporization; atomic level solutions; precursor delivery; pulsed CVD; Art; Atomic layer deposition; Capacitors; Coatings; Dielectrics; Electrodes; Microelectronics; Process control; Productivity; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734795
Filename
4734795
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