Title :
Single Event Upset Characterization of the Spartan-6 Field Programmable Gate Array Using Proton Irradiation
Author :
Hiemstra, David M. ; Kirischian, Valeri
Author_Institution :
MDA, Brampton, ON, Canada
Abstract :
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Spartan-6 FPGA are presented. Upset rates in the space radiation environment are estimated.
Keywords :
SRAM chips; field programmable gate arrays; SRAM; Spartan-6 FPGA; Spartan-6 field programmable gate array; functional blocks; logic configuration; proton irradiation; single event upset characterization; space radiation environment; Field programmable gate arrays; Logic gates; Performance evaluation; Protons; Radiation effects; Random access memory; Single event upsets;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658214
