Title :
Specific Characterization for Destructive Single Event Effects on GaAs Power P-HEMT MMIC
Author :
Marec, R. ; Bensoussan, A. ; Muraro, J.L. ; Portal, L. ; Calvel, P. ; Barillot, C. ; Perichaud, M.G. ; Marchand, Laurent ; Vignon, Gael
Author_Institution :
Thales Alenia Space, Toulouse, France
Abstract :
Specific Single Event Effects characterization based on RF and worst case DC conditions are used to demonstrate that two European GaAs power P-HEMT MMIC processes are safe under heavy ions.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; power HEMT; European GaAs power P-HEMT; GaAs; GaAs power P-HEMT; MMIC process; RF conditions; destructive single event effects; heavy ions; worst case DC conditions; Gallium arsenide; Ions; Logic gates; MESFETs; MMICs; Radio frequency; Stress;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658216
