Title :
Silicon and GaAs based novel amplifiers and mixers
Author :
Tokumitsu, T. ; Meharry, D.
Keywords :
Circuit topology; DH-HEMTs; Gallium arsenide; Germanium silicon alloys; PHEMTs; Power dissipation; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516525
