A MMIC distributed amplifier with bandwidth of 8–40GHz

Author

Qinghua, Huang ; Xunchun, Liu ; Mingli, Hao

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1393

Lastpage

1395

Abstract

A MMIC (Monolithic Microwave Integrated Circuit) distributed amplifier with bandwidth of 8-40GHz was successfully developed. We proposed a novel structure for the distributed amplifier, that is separating the amplifier into two sections and connecting the two sections by a capacitor. By this means, we can get higher gain than the traditional distributed amplifier. The amplifier was successfully designed and fabricated with 0.15Â¿m PHEMT technology and the chip area is 2.8mm*1mm. Measured results show that the gain is 11dB in the bandwidth of 8-40GHz, and the input and output return loss are more than 10dB in the whole band.

Keywords

MMIC amplifiers; capacitors; distributed amplifiers; high electron mobility transistors; MMIC; PHEMT technology; bandwidth 8 GHz to 40 GHz; capacitor; distributed amplifier; monolithic microwave integrated circuit; size 0.15 mum; Bandwidth; Capacitors; Distributed amplifiers; Gain measurement; Joining processes; Loss measurement; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734803

Filename

4734803