Title :
On-wafer graphene diodes for high-frequency applications
Author :
Dragoman, Mircea ; Dinescu, Adrian ; Dragoman, Daniela
Author_Institution :
Nat. Inst. for R&D in Microtechnol. (IMT), Bucharest, Romania
Abstract :
This manuscript presents the theory, the fabrication and the initial measurements of geometric diodes made on a graphene monolayer. The fabrication process is done on-wafer, in deep contrast with the majority of graphene devices, which are fabricated on small graphene flakes. The first estimations show that the cut-off frequency of this device is 6.5 THz.
Keywords :
graphene; submillimetre wave diodes; frequency 6.5 THz; geometric diodes; graphene devices; graphene monolayer; high-frequency applications; on-wafer graphene diodes; Charge carriers; Current measurement; Electrodes; Graphene; Metals; Schottky diodes;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818883
