Title :
High-performance InP-based HEMT´s with a graded pseudomorphic channel
Author :
Chough, K.B. ; Hong, Brian W P ; Caneau, C. ; Song, J.I. ; Jeon, K.I. ; Hong, S.C. ; Lee, K.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Al0.48In0.52As/Ga1-xInx As pseudomorphic HEMT´s with very high gate and channel breakdown voltages were successfully fabricated. To improve the breakdown characteristics, graded pseudomorphic Ga1-xInxAs and Al0.2In0.8P were adopted as a channel and Schottky layer, respectively. Systematic studies reveal that the modification of the quantum-well channel by grading the composition considerably changes the channel breakdown (BVds) and output conductance (g0) characteristics. HEMT´s with graded Ga1-xInxAs channel (x=0.7 to 0.6) exhibited improved BVds (11 V) and g0 (40 mS/mm) compared with HEMT´s with uniform composition (x=0.7) in the channel (BVds =4 V and g0=80 mS/mm)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor quantum wells; 11 V; Al0.2In0.8P; Al0.48In0.52As-GaInAs; InP-based HEMTs; Schottky layer; channel breakdown voltages; channel layer; composition grading; gate breakdown voltages; graded pseudomorphic channel; output conductance; quantum-well; Electric breakdown; Electrons; Etching; Gold; HEMTs; Impact ionization; Indium; Potential well; Temperature; Wave functions;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328261
