First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

Author

Xin Zhu ; Jing Wang ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2005

fDate

12-17 June 2005

Abstract

A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dBΩ transimpedance, and a corresponding gain-bandwidth of 1.13 THz-Ω while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good gain-bandwidth-product per dc power figure-of-merit (GBP/P_dc) of 1.05 GHz/mW.

Keywords

III-V semiconductors; MMIC amplifiers; arsenic compounds; bipolar MMIC; circuit feedback; gallium compounds; indium compounds; low-power electronics; 15.3 mW; 2.55 V; 6 dB; 8 GHz; DHBT; InP-GaAsSb-InP; MMIC; broadband transimpedance amplifier; dc power figure-of-merit; gain-bandwidth product; heterojunction bipolar transistors; low-power monolithic transimpedance amplifier; microwave amplifiers; shunt-shunt feedback; single-stage buffer amplifier; Broadband amplifiers; Circuits; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave amplifiers; Microwave devices; Optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516531

Filename

1516531