InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application

Author

Lai, Fang-I ; Kuo, H.C. ; Huang, H.W. ; Wang, S.C. ; Lin, G.R. ; Chi, J. ; Maleev, N.A. ; Blokhin, S.A.

Author_Institution

Yuan-Ze Univ., Chung-Li

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

The temperature dependent performance of VCSELs based on sub-monolayer (SML) InGaAs quantum dots (QDs) with fully doped AlGaAs/GaAs DBRs is presented. The SML QD VCSEL shows extreme temperature insensitivity under high speed operated in 2.125 Gb/s from -40degC~100degC. The continue-wave (CW) light-current (LI) output characteristics of the laser is also studied.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; optical communication equipment; optical fibre communication; quantum dot lasers; surface emitting lasers; AlGaAs-GaAs; DBR; InGaAs; bit rate 2.125 Gbit/s; continue-wave light-current output characteristics; high speed operation; submonolayer quantum dots VCSEL; temperature -40 degC to 100 degC; temperature insensitivity; Indium gallium arsenide; Optical fiber LAN; Optical fiber sensors; Optical sensors; Quantum dot lasers; Quantum dots; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385952

Filename

4385952