• DocumentCode
    2149998
  • Title

    Analysis of T0 in 1.3 μm multi-quantum well and bulk active lasers

  • Author

    Ackerman, D.A. ; Morton, P.A. ; Kazarinov, R.F. ; Tanbun-Ek, T. ; Logan, R.A.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    466
  • Lastpage
    468
  • Abstract
    Temperature dependence of threshold current in 1.3 μm semiconductor lasers is investigated via measurement and analysis of sub-threshold current, gain, loss and injection efficiency as a function of carrier density. Rapid increase of transparency carrier density and decrease of differential gain with temperature are found to dominate the threshold temperature sensitivity
  • Keywords
    carrier density; optical losses; semiconductor lasers; transparency; 1.3 micron; bulk active lasers; characteristic temperature; differential gain; injection efficiency; loss; multi-quantum well lasers; sub-threshold current; temperature dependence; threshold current; transparency carrier density; Carrier confinement; Charge carrier density; Current measurement; Distributed feedback devices; Loss measurement; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328271
  • Filename
    328271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149998