DocumentCode
2150055
Title
Electron beam pumped semiconductor laser for particle beam diagnostics
Author
Garkusha, O.V. ; Pishchulin, I.V. ; Solov´ev, N.G. ; Romashkin, O.V.
Author_Institution
Moscow Eng. Phys. Inst., USSR
fYear
1991
fDate
6-9 May 1991
Firstpage
1570
Abstract
Some characteristics of a technique for accelerated particle beam monitoring are presented. This technique for beam current and pulse duration measurement is based on the electron beam pumped semiconductor laser (EBP-laser) principle of operation. Experimental investigations of a 300- mu m GaAs primary probe were carried out. Accelerated electron beam pulses with current range 50-500 A, pulse duration 5 mu s, and energy 200 keV were registered. The system sensitivity in this current range was 5*10/sup -3/ V/A.<>
Keywords
particle beam diagnostics; semiconductor junction lasers; EBP-laser; accelerated particle beam monitoring; beam current; electron beam pumped semiconductor laser; particle beam diagnostics; pulse duration measurement; system sensitivity; Acceleration; Electron beams; Laser beams; Laser excitation; Monitoring; Particle beam measurements; Particle beams; Pulse measurements; Pump lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 1991. Accelerator Science and Technology., Conference Record of the 1991 IEEE
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-0135-8
Type
conf
DOI
10.1109/PAC.1991.164706
Filename
164706
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