DocumentCode
2150084
Title
An application of selective area MOVPE at atmospheric pressure to the realisation of a DBR laser
Author
Rose, B. ; Delorme, F. ; Gilleron, M. ; Grosmaire, S. ; Robein, D.
Author_Institution
France Telecom, CNET, Paris, France
fYear
1994
fDate
27-31 Mar 1994
Firstpage
484
Lastpage
487
Abstract
Selective area epitaxy can be easily obtained at atmospheric pressure conditions by introducing a compound preventing nucleation on the masked areas or by choosing a proper set of mask size. These two approaches have been investigated and conclusions have been made on a laser and waveguide integration realisation
Keywords
distributed Bragg reflector lasers; masks; nucleation; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DBR laser; MOVPE; atmospheric pressure; laser waveguide integration; mask; nucleation; selective area epitaxy; Composite materials; Dielectric materials; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Etching; Molecular beam epitaxial growth; Semiconductor materials; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328275
Filename
328275
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