Title :
Monolithic III-V/Si integration
Author :
Fitzgerald, E.A. ; Bulsara, M.T. ; Bai, Y. ; Cheng, C. ; Liu, W.K. ; Lubyshev, D. ; Fastenau, J.M. ; Wu, Y. ; Urtega, M. ; Ha, W. ; Bergman, J. ; Brar, B. ; Drazek, C. ; Daval, N. ; Letertre, F. ; Hoke, W.E. ; Laroche, J.R. ; Herrick, K.J. ; Kazior, T.E.
Author_Institution :
Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Abstract :
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al2O3/GaAs process for III-V MOS.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOCVD; aluminium compounds; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; light emitting diodes; silicon; Al2O3-GaAs; HBT; III-V MOS; III-V optical devices; InP; MOCVD; Si; electronic devices; high mobility material; metalorganic chemical vapour deposition; monolithic integration; silicon CMOS circuits; visible LED; CMOS process; III-V semiconductor materials; Indium phosphide; Integrated optics; Light emitting diodes; Monolithic integrated circuits; Optical device fabrication; Optical devices; Optical materials; Silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734819
