Monolithic III-V/Si integration

Author

Fitzgerald, E.A. ; Bulsara, M.T. ; Bai, Y. ; Cheng, C. ; Liu, W.K. ; Lubyshev, D. ; Fastenau, J.M. ; Wu, Y. ; Urtega, M. ; Ha, W. ; Bergman, J. ; Brar, B. ; Drazek, C. ; Daval, N. ; Letertre, F. ; Hoke, W.E. ; Laroche, J.R. ; Herrick, K.J. ; Kazior, T.E.

Author_Institution

Mater. Sci. & Eng., MIT, Cambridge, MA, USA

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1421

Lastpage

1424

Abstract

We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al₂O₃/GaAs process for III-V MOS.

Keywords

CMOS integrated circuits; III-V semiconductors; MOCVD; aluminium compounds; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; light emitting diodes; silicon; Al₂O₃-GaAs; HBT; III-V MOS; III-V optical devices; InP; MOCVD; Si; electronic devices; high mobility material; metalorganic chemical vapour deposition; monolithic integration; silicon CMOS circuits; visible LED; CMOS process; III-V semiconductor materials; Indium phosphide; Integrated optics; Light emitting diodes; Monolithic integrated circuits; Optical device fabrication; Optical devices; Optical materials; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734819

Filename

4734819